STL10N60M2 STMicroelectronics

STL10N60M2 N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features V DS Order code R max I DS(on) D T Jmax STL10N60M2 650 V 0.660 5.5 A Extremely low gate charge 1 2 3 Lower R x area vs previous generation DS(on) 4 Low gate input resistance PowerFLAT 5x6 HV 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(5, 6, 7, 8) 8 7 6 5 Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh G(4) technology: MDmesh II Plus low Qg. This revolutionary Power MOSFET associates a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and 12 3 4 gate charge. It is therefore suitable for the most demanding high efficiency converters. Top View S(1, 2, 3) AM15540v3 Table 1. Device summary Order code Marking Package Packaging STL10N60M2 10N60M2 PowerFLAT 5x6 HV Tape and reel March 2014 DocID025439 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL10N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID025439 Rev 2