STL30N10F7 Datasheet N-channel 100 V, 0.027 typ., 8 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL30N10F7 100 V 0.035 8 A 4.8 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL30N10F7 Product summary Order code STL30N10F7 Marking 30N10F7 Package PowerFLAT 5x6 Packing Tape and reel DS9999 - Rev 2 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL30N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 30 A C D (1) I Drain current (continuous) at T = 100 C 18.2 A C D (1)(2) I Drain current (pulsed) 120 A DM (3) Drain current (continuous) at T = 25 C I 8 A D pcb (3) Drain current (continuous) at T = 100 C I 5.2 A D pcb (2)(3) I Drain current (pulsed) 32 A DM (1) P Total power dissipation at T = 25 C 75 W TOT C (3) P Total power dissipation at T = 25 C 4.8 W TOT pcb T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. This value is rated according to R . thj-c 2. Pulse width is limited by safe operating area. 3. This value is rated according to R . thj-pcb Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb 31.3 C/W thj-pcb R Thermal resistance junction-case 2 C/W thj-case 1. When mounted on an FR-4 board of 1 inch, 2oz Cu, t < 10 s. DS9999 - Rev 2 page 2/18