R6009ENJ Datasheet Nch 600V 9A Power MOSFET llOutline TO-263S V 600V DSS SC-83 R (Max.) 0.535 DS(on) LPT(S) I 9A D P 94W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking R6009ENJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 9 A C D Continuous drain current *1 T = 100C I 4.9 A C D *2 I Pulsed drain current 18 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 1.4 A AR *3 E Avalanche energy, single pulse 153 mJ AS *3 E Avalanche energy, repetitive 0.23 mJ AR *4 Power dissipation (T = 25C) P 94 W C D T Junction temperature 150 j T Operating junction and storage temperature range -55 +150 stg www.rohm.com 1/12 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. R6009ENJ Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.3 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 2.8A GS D Static drain - source *6 R T = 25C - 0.500 0.535 DS(on) j on - state resistance T = 125C - 1.00 - j R Gate resistance f =1MHz, open drain - 9.6 - G www.rohm.com 2/12 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.