STL34N65M5 STMicroelectronics

STL34N65M5 N-channel 650 V, 0.099 typ., 22.5 A MDmesh V Power MOSFET in PowerFLAT 8x8 HV package Datasheet - production data Features V R DS DS(on) Order code I D %RWWRP YLHZ 6 T max Jmax 6 6 (1) STL34N65M5 710 V 0.120 22.5 A * 1. The value is rated according to R and limited by thj-case package. 100% avalanche tested 7 +9 3RZHU)/ Low input capacitance and gate charge Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known * PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 6 suitable for applications which require superior power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Package Packaging STL34N65M5 34N65M5 PowerFLAT 8x8 HV Tape and reel April 2014 DocID023325 Rev 1 1/15 This is information on a product in full production. www.st.comContents STL34N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/15 DocID023325 Rev 1