Product Information

STL33N60DM2

STL33N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 2.0373 ea
Line Total: USD 6111.9

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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STL33N60DM2
STMicroelectronics

3000 : USD 4.3014
6000 : USD 4.2612
9000 : USD 4.2223
12000 : USD 4.1834
15000 : USD 4.1432
24000 : USD 4.1043
30000 : USD 4.0641
75000 : USD 4.0251
150000 : USD 3.9849

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL33N60DM2
STMicroelectronics

3000 : USD 3.5235

0 - WHS 3


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

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STL33N60DM2
STMicroelectronics

1 : USD 3.2668
10 : USD 2.8625
30 : USD 2.7885
100 : USD 2.713
500 : USD 2.6812
1000 : USD 2.6392

0 - WHS 4


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STL33N60DM2
STMicroelectronics

1 : USD 7.8014
10 : USD 5.1074

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Taric
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STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features V DS Order code R max I DS(on) D T Jmax 5 STL33N60DM2 650 V 0.140 21 A 4 3 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packaging STL33N60DM2 33N60DM2 PowerFLAT 8x8 HV Tape and reel March 2016 DocID026781 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STL33N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 PowerFLAT 8x8 HV package mechanical data ........................... 10 4.2 PowerFLAT 8x8 HV packing information ..................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026781 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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