STL33N60DM2 STMicroelectronics

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features V DS Order code R max I DS(on) D T Jmax 5 STL33N60DM2 650 V 0.140 21 A 4 3 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packaging STL33N60DM2 33N60DM2 PowerFLAT 8x8 HV Tape and reel March 2016 DocID026781 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STL33N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 PowerFLAT 8x8 HV package mechanical data ........................... 10 4.2 PowerFLAT 8x8 HV packing information ..................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026781 Rev 2