Product Information

STL3NK40

STL3NK40 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.644 ea
Line Total: USD 1932

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL3NK40
STMicroelectronics

3000 : USD 2.4115
6000 : USD 2.3868
9000 : USD 2.3634
12000 : USD 2.34
15000 : USD 2.3166
24000 : USD 2.2932
30000 : USD 2.2698
75000 : USD 2.2477
150000 : USD 2.2256

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL3NK40
STMicroelectronics

3000 : USD 0.644

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000

Stock Image

STL3NK40
STMicroelectronics

3000 : USD 1.6269

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL3NK40 N-channel 400 V, 4.5 typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL3NK40 400 V 5.5 0.43 A 2.5 W Extremely high dv/dt capability 100% avalanche tested Figure 1: Internal schematic diagram Gate charge minimized Applications Switching applications Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1: Device summary Order code Marking Package Packing STL3NK40 3NK40 PowerFLAT 5x5 Tape and reel February 2017 DocID16246 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STL3NK40 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x5 package information .......................................... 10 5 Revision history ............................................................................ 12 2/13 DocID16246 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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