STL40C30H3LL N-channel 30 V, 0.019 typ., 10 A, P-channel 30 V, 0.024 typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code Channel V R max I DS DS(on) D N 0.021 10 V 10 A STL40C30H3LL 30 V P0.03 10 V 8 A 1 2 R * Q industry benchmark DS(on) g 3 4 Extremely low on-resistance R DS(on) High avalanche ruggedness Low gate drive power losses PowerFLAT5x6 double island Applications Figure 1. Internal schematic diagram Switching applications Description This device is a complementary N-channel and P- channel Power MOSFET developed using STripFET V (P-channel) and STripFET VI DeepGATE (N-channel) technologies. The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class. AM00623v2 Table 1. Device summary Order code Marking Packages Packaging STL40C30H3LL 40C30H3L PowerFLAT 5x6 double island Tape and reel Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed April 2014 DocID023874 Rev 5 1/19 This is information on a product in full production. www.st.comContents STL40C30H3LL Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) for N-channel 6 2.2 Electrical characteristics (curves) for P-channel . 8 3 Test circuits for N-channel . 10 4 Test circuits for P-channel 11 5 Package mechanical data 12 6 Packaging mechanical data 16 7 Revision history . 18 2/19 DocID023874 Rev 5
