STL23NM60ND STMicroelectronics

STL23NM60ND N-channel 600 V, 0.175 typ., 19.5 A, FDmesh II Power MOSFET (with fast diode) in PowerFLAT 8x8 HV package Datasheet production data Features Order code V T R max I DS Jmax DS(on) D %RWWRP YLHZ 6 6 6 STL23NM60ND 650 V 0.199 19.5 A * Fast-recovery body diode Low gate charge and input capacitance Low on-resistance 7 +9 3RZHU)/ 100% avalanche tested High dv/dt ruggedness Applications Figure 1. Internal schematic diagram Switching applications Description This FDmesh II Power MOSFET with fast- recovery body diode is produced using MDmesh II technology. Utilizing a new strip- * layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STL23NM60ND 23NM60ND PowerFLAT 8x8 HV Tape and reel December 2014 DocID17439 Rev 3 1/15 This is information on a product in full production. www.st.com 15Contents STL23NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/15 DocID17439 Rev 3