STL65DN3LLH5 STMicroelectronics

STL65DN3LLH5 Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET Features R DS(on) Type V I DSS D max (1) STL65DN3LLH5 30 V <0.0065 19 A 1. The value is rated according R thj-pcb R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) Very low switching gate charge PowerFLAT (5x6) High avalanche ruggedness Double island Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description th This product utilizes the 5 generation of design rules of STs proprietary STripFET technology. The lowest available R *Q , in this chip scale DS(on) g package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging PowerFLAT(5x6) STL65DN3LLH5 65DN3LLH5 Tape and reel Double island December 2010 Doc ID 18323 Rev 1 1/12 www.st.com 12Contents STL65DN3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 18323 Rev 1