Product Information

STL65DN3LLH5

STL65DN3LLH5 electronic component of STMicroelectronics

Datasheet
MOSFET Dual N-ch 30 V,19A STripFET V Pwr Mos
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STL65DN3LLH5
STMicroelectronics

1 : USD 1.7589
10 : USD 1.4872
100 : USD 1.1869
500 : USD 1.0738
1000 : USD 0.9529
3000 : USD 0.9386
6000 : USD 0.9386
9000 : USD 0.9022
24000 : USD 0.8671
N/A

Obsolete
0 - WHS 2

MOQ : 9
Multiples : 1

Stock Image

STL65DN3LLH5
STMicroelectronics

9 : USD 1.5992
10 : USD 1.4395
25 : USD 1.4218
100 : USD 1.2295
250 : USD 1.2216
500 : USD 1.1112
1000 : USD 0.9743
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STL65DN3LLH5 Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET Features R DS(on) Type V I DSS D max (1) STL65DN3LLH5 30 V <0.0065 19 A 1. The value is rated according R thj-pcb R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) Very low switching gate charge PowerFLAT (5x6) High avalanche ruggedness Double island Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description th This product utilizes the 5 generation of design rules of STs proprietary STripFET technology. The lowest available R *Q , in this chip scale DS(on) g package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging PowerFLAT(5x6) STL65DN3LLH5 65DN3LLH5 Tape and reel Double island December 2010 Doc ID 18323 Rev 1 1/12 www.st.com 12Contents STL65DN3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 18323 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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