STL8N6F7 STMicroelectronics

STL8N6F7 N-channel 60 V, 0.019 typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V R max I DS DS(on) D STL8N6F7 60 V 0.023 8 A 1 2 Among the lowest R on the market DS(on) 3 4 Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness PowerFLAT 3.3x3.3 Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes D(5, 6, 7, 8) 8 7 6 5 STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(4) S(1, 2, 3) 1 2 3 4 AM15810v1 Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.3 Tape and reel October 2015 DocID028258 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STL8N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 PowerFLAT 3.3x3.3 package information ......................................... 9 5 Revision history ............................................................................ 12 2/13 DocID028258 Rev 2