Product Information

STP110N55F6

STP110N55F6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 55V 4.3mOhm 55V STripFET VI
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 2.0273 ea
Line Total: USD 40.55

48 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 20  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 22
Multiples : 1

Stock Image

STP110N55F6
STMicroelectronics

22 : USD 1.6997

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STP110N55F6 N-channel 55 V, 4.5 typ., 110 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STP110N55F6 55 V 5.2 m 110 A Low gate charge Very low on-resistance 3 2 1 High avalanche ruggedness TO-220 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the STripFET F6 technology, % 7 with a new trench gate structure. The resulting Power MOSFET exhibits a very low R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order code Marking Packages Packaging STP110N55F6 110N55F6 TO-220 Tube July 2014 DocID019059 Rev 2 1/13 This is information on a product in full production. www.st.comContents STP110N55F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID019059 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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