DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I CSP with Footprint 2.70mm 1.81mm S Max BVSSS RSS(ON) Typ TA = +25C Height = 0.21mm for Low Profile ESD Protection of Gate 12V 5.3m VGS = 3.8V 16.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description For automotive applications requiring specific change control This new generation MOSFET is designed to minimize the on-state (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and resistance (R ) and yet maintain superior switching performance, SS(ON) manufactured in IATF 16949 certified facilities), please making it ideal for high-efficiency power management applications. contact us or your local Diodes representative. DMN1006UCA6 6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Source-Source Voltage V 12 V SSS Gate-Source Voltage V 12 V GSS T = +25C 16.6 Steady A Continuous Source Current (Note 5) V = 4.5V I A GS S State 13.2 TA = +70C T = +25C 12.1 Steady A A Continuous Source Current (Note 5) VGS = 2.5V IS State T = +70C 9.7 A Pulsed Source Current (Note 6) 80 A ISM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 1.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 124.6 C/W A JA Power Dissipation (Note 5) P 2.4 W D 51.5 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage BV 12 V V = 0V, I = 1mA SSS GS S Zero Gate Voltage Drain Current T = +25C I 1 A V = 10V V = 0V J SSS SS GS Gate-Source Leakage 10 A IGSS VGS = 8V, VSS=0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.3 V VSS = 6V, IS = 1mA VGS(TH) 3.5 5.0 5.9 VGS = 4.5V, IS = 3A 3.6 5.2 6.3 VGS = 4.0V, IS = 3A Static Source-Source On-Resistance 3.8 5.3 6.5 m RSS(ON) VGS = 3.8V, IS = 3A 3.8 5.5 8.0 VGS = 3.1V, IS = 3A 4.2 6.0 9.0 V = 2.5V, I = 3A GS S Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 3A SS GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 2,360 iss VSS = 6V, VGS = 0V, Output Capacitance C 666 pF oss f = 1.0MHz Reverse Transfer Capacitance C 325 rss Total Gate Charge Q 35.2 g Gate-Source Charge 7.0 Qgs VSS = 6V, VGS = 4.5V, nC Gate-Drain Charge 8.3 I = 18A Qgd S 4.2 Gate Charge at VTH Qg(TH) Turn-On Delay Time 615 tD(ON) Turn-On Rise Time t 1,447 V = 6V, V = 4.5V, R SS GS ns Turn-Off Delay Time t 2,736 IS = 3A D(OFF) Turn-Off Fall Time t 3812 F 2 2 Notes: 5. Device mounted on FR-4 material with 1inch (6.45cm ), 2oz. (0.071mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN1006UCA6 December 2019 Diodes Incorporated www.diodes.com Document number: DS39390 Rev. 7 - 2