STP150N10F7 STMicroelectronics

STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 typ., 110 A, STripFET F7 2 Power MOSFETs in I PAK and TO-220 packages Datasheet production data Features Order codes V R I P DS DS(on)max D TOT STI150N10F7 100 V 0.0042 110 A 250 W STP150N10F7 TAB TAB Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity 3 3 2 2 1 1 High avalanche ruggedness 2 I PAK TO-220 Applications Switching applications Description Figure 1. Internal schematic diagram These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced % 7 trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 0 Y Table 1. Device summary Order codes Marking Package Packaging 2 STI150N10F7 I PAK 150N10F7 Tube STP150N10F7 TO-220 August 2014 DocID024552 Rev 4 1/15 This is information on a product in full production. www.st.comContents STI150N10F7, STP150N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 14 2/15 DocID024552 Rev 4