X-On Electronics has gained recognition as a prominent supplier of STP18N55M5 MOSFET across the USA, India, Europe, Australia, and various other global locations. STP18N55M5 MOSFET are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

STP18N55M5 STMicroelectronics

STP18N55M5 electronic component of STMicroelectronics
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See Product Specifications
Part No.STP18N55M5
Manufacturer: STMicroelectronics
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar; 550V; 10A; 110W; TO220-3
Datasheet: STP18N55M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6991 ea
Line Total: USD 1.7

Availability - 1
Ships to you between
Tue. 25 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970 - WHS 1


Ships to you between Tue. 25 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 3.2643
10 : USD 3.0329
25 : USD 2.1918
100 : USD 1.9864
500 : USD 1.924
1000 : USD 1.8031

1 - WHS 2


Ships to you between Tue. 25 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 1.6991

970 - WHS 3


Ships to you between Tue. 25 Jun to Mon. 01 Jul

MOQ : 5
Multiples : 1
5 : USD 3.276
10 : USD 3.0108
25 : USD 2.1918
100 : USD 1.9864
500 : USD 1.924
1000 : USD 1.8031

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP18N55M5 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP18N55M5 and other electronic components in the MOSFET category and beyond.

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STD18N55M5, STP18N55M5 Datasheet N-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages Features V DS TAB R max. Order code Package TAB DS(on) T jmax. 2 3 STD18N55M5 DPAK 1 600 V 0.192 3 2 STP18N55M5 TO-220 DPAK TO-220 1 Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications G(1) Switching applications S(3) AM01475v1 noZen Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STD18N55M5 STP18N55M5 DS6705 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STD18N55M5, STP18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 16 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 64 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 16 A, di/dt 400 A/s V < V , V = 340 V. SD DS peak (BR)DSS DD Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance, junction-to-case 1.14 C/W thJC R Thermal resistance, junction-to-ambient 62.5 C/W thJA (1) R Thermal resistance, junction-to-board 50 C/W thJB 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 210 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6705 - Rev 5 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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