STP180N10F3 STMicroelectronics

STP180N10F3 N-channel 100 V, 4.5 m , 120 A STripFETIII Power MOSFET TO-220 Features R DS(on) TAB Order codes V I DSS D max. STP180N10F3 100 V 5.1 m 120 A Ultra low on-resistance 3 2 100% avalanche tested 1 TO-220 Applications High current switching applications Description This device is an N-channel enhancement mode Figure 1. Internal schematic diagram Power MOSFET produced using STMicroelectronics STripFET III technology, which is specifically designed to minimize on- 4 resistance and gate charge to provide superior switching performance. 3 - V Table 1. Device summary Order codes Marking Package Packaging STP180N10F3 180N10F3 TO-220 Tube July 2011 Doc ID 14933 Rev 4 1/13 www.st.com 13Contents STP180N10F3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/13 Doc ID 14933 Rev 4