Green DMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature I Max D Environments BV R Max DSS DS(ON) T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m V = 10V 100A GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses G Lead-Free Finish RoHS compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ), yet maintain superior switching performance, making it DS(ON) An Automotive-Compliant Part is Available Under Separate ideal for high efficiency power management applications. Datasheet (DMTH6004SK3Q) Mechanical Data Applications Case: TO252 (DPAK) Engine Management Systems Case Material: Molded Plastic, Green Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D D TO252 (DPAK) G D G S S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Case Packaging DMTH6004SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6004SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage 20 V VGSS T = +25C C 100 Continuous Drain Current (Note 6) (Note 9) I A D T = +100C C 75 Maximum Body Diode Forward Current (Note 6) T = +25C I 100 A C S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 150 A DM 45 Avalanche Current, L = 0.2mH I A AS Avalanche Energy, L = 0.2mH 200 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) T = +25C P 3.9 W A D Thermal Resistance, Junction to Ambient (Note 5) R 38 C/W JA Total Power Dissipation (Note 6) T = +25C P 180 W C D Thermal Resistance, Junction to Case (Note 6) 0.8 C/W RJC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 3 3.8 m V = 10V, I = 90A DS (ON) GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4,556 ISS Output Capacitance 1,383 pF C V = 30V, V = 0V, f = 1MHz OSS DS GS Reverse Transfer Capacitance 105.2 C RSS Gate Resistance 0.66 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 95.4 Q G 21.6 Gate-Source Charge Q nC V = 30V, I = 90A, V = 10V GS DS D GS 20.4 Gate-Drain Charge Q GD 13.2 Turn-On Delay Time t D(ON) 11.7 Turn-On Rise Time t R V = 30V, V = 10V, DD GS ns 31 Turn-Off Delay Time t I = 90A, R = 3.5 D(OFF) D G Turn-Off Fall Time 12 t F Body Diode Reverse Recovery Time 50.5 ns t RR I = 50A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 80.8 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing 9. Package limited. 2 of 7 DMTH6004SK3 December 2015 Diodes Incorporated www.diodes.com Document number: DS37326 Rev. 2 - 2