STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N N-channel 500 V, 0.135 , 21 A DPAK, TO-220, TO-220FP, TO-247 MDmesh II Power MOSFET Features V R DSS DS(on) Order codes I D ( Tjmax) max. 3 3 2 2 1 1 STB28NM50N TO-220 TO-220FP STF28NM50N 550 V < 0.158 21 A STP28NM50N STW28NM50N 100% avalanche tested 3 3 2 1 1 Low input capacitance and gate charge DPAK TO-247 Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STB28NM50N DPAK Tape and reel STF28NM50N TO-220FP 28NM50N STP28NM50N TO-220 Tube STW28NM50N TO-247 June 2011 Doc ID 17432 Rev 2 1/21 www.st.com 21Contents STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 17432 Rev 2