Product Information

STP45N60DM2AG

STP45N60DM2AG electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 4.0425 ea
Line Total: USD 4042.5

0 - Global Stock
MOQ: 1000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1

Stock Image

STP45N60DM2AG
STMicroelectronics

1000 : USD 5.7382
2000 : USD 5.6797
2500 : USD 5.6238
3000 : USD 5.5679
4000 : USD 5.512
5000 : USD 5.4561
10000 : USD 5.4015
20000 : USD 5.3482
50000 : USD 5.2949

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STP45N60DM2AG
STMicroelectronics

1 : USD 14.3621
10 : USD 12.4478
100 : USD 10.199
500 : USD 8.6823
1000 : USD 7.3224
2000 : USD 6.9563

0 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STP45N60DM2AG
STMicroelectronics

1 : USD 10.0532
10 : USD 6.5865

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Product
Series
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STP45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V R DS DS(on) Order code I P D TOT T max. Jmax. STP45N60DM2AG 650 V 0.093 34 A 250 W Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP45N60DM2AG 45N60DM2 TO-220 Tube July 2015 DocID028065 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP45N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID028065 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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