STP45N60DM2AG STMicroelectronics

STP45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V R DS DS(on) Order code I P D TOT T max. Jmax. STP45N60DM2AG 650 V 0.093 34 A 250 W Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP45N60DM2AG 45N60DM2 TO-220 Tube July 2015 DocID028065 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP45N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID028065 Rev 1