Product Information

STP45NF06

STP45NF06 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 26A; 80W; TO220-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

18: USD 0.6116 ea
Line Total: USD 11.01

1606 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 18  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
19060 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 68
Multiples : 1

Stock Image

STP45NF06
STMicroelectronics

68 : USD 0.4963
100 : USD 0.4963
300 : USD 0.4963
1250 : USD 0.4963
4000 : USD 0.4963

683 - WHS 2


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STP45NF06
STMicroelectronics

1 : USD 1.3883
10 : USD 1.1576
50 : USD 1.0308
100 : USD 0.8896
500 : USD 0.8251
1000 : USD 0.7981

365 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STP45NF06
STMicroelectronics

1 : USD 1.6229
3 : USD 0.8316
10 : USD 0.7324
27 : USD 0.6371
73 : USD 0.6022

1606 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 18
Multiples : 1

Stock Image

STP45NF06
STMicroelectronics

18 : USD 0.6116
100 : USD 0.6026
250 : USD 0.5725
500 : USD 0.3683
1000 : USD 0.3609

Read More Specifications

     
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

STP45NF06 N-channel 60 V, 0.22 typ., 38 A, STripFET II Power MOSFET in a TO-220 package Datasheet production data Features Order code V R I DS DS(on) D TAB STP45NF06 60 V 0.028 38 A Typical R = 0.022 DS(on) Exceptional dv/dt capability 3 2 100% avalanche tested 1 Standard threshold drive TO-220 Applications Switching application Figure 1. Internal schematic diagram Description ,, T TAABB This Power MOSFET has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Table 1. Device summary Order code Marking Package Packaging STP45NF06 45NF06 TO-220 Tube December 2012 Doc ID 7433 Rev 6 1/13 This is information on a product in full production. www.st.com 13Contents STP45NF06 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 7433 Rev 6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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