STP45N10F7 STMicroelectronics

STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 typ., 45 A, STripFET F7 2 Power MOSFETs in DPAK, I PAK and TO-220 packages Datasheet - production data Features TAB TAB R DS(on) 3 Order code V I P DS D TOT max. 1 3 STD45N10F7 DPAK 2 1 2 STI45N10F7 100 V 0.018 45 A 60 W I PAK TAB STP45N10F7 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) 3 2 1 Low C Ci ratio for EMI immunity rss/ ss TO-220 High avalanche ruggedness Applications Figure 1. Internal schematic diagram Switching applications % 7 Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- * state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 0 Y Table 1. Device summary Order code Marking Package Packing STD45N10F7 DPAK Tape and reel 2 STI45N10F7 45N10F7 I PAK Tube STP45N10F7 TO-220 September 2015 DocID024455 Rev 2 1/20 This is information on a product in full production. www.st.comContents STD45N10F7, STI45N10F7, STP45N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 4.1 DPAK (TO-252) package information . 9 4.2 IPAK (TO-262) package information 12 4.3 TO-220 type A package information . 14 5 Packing mechanical data 16 6 Revision history . 19 2/20 DocID024455 Rev 2