Product Information

STP45N10F7

STP45N10F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 100 V 0 013 Ohm typ 45 A
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.832 ea
Line Total: USD 41.6

388 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
388 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 50
Multiples : 50

Stock Image

STP45N10F7
STMicroelectronics

50 : USD 0.832
200 : USD 0.832
750 : USD 0.832
2000 : USD 0.832
5000 : USD 0.832

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 typ., 45 A, STripFET F7 2 Power MOSFETs in DPAK, I PAK and TO-220 packages Datasheet - production data Features TAB TAB R DS(on) 3 Order code V I P DS D TOT max. 1 3 STD45N10F7 DPAK 2 1 2 STI45N10F7 100 V 0.018 45 A 60 W I PAK TAB STP45N10F7 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) 3 2 1 Low C Ci ratio for EMI immunity rss/ ss TO-220 High avalanche ruggedness Applications Figure 1. Internal schematic diagram Switching applications % 7 Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- * state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 0 Y Table 1. Device summary Order code Marking Package Packing STD45N10F7 DPAK Tape and reel 2 STI45N10F7 45N10F7 I PAK Tube STP45N10F7 TO-220 September 2015 DocID024455 Rev 2 1/20 This is information on a product in full production. www.st.comContents STD45N10F7, STI45N10F7, STP45N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 4.1 DPAK (TO-252) package information . 9 4.2 IPAK (TO-262) package information 12 4.3 TO-220 type A package information . 14 5 Packing mechanical data 16 6 Revision history . 19 2/20 DocID024455 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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