Product Information

STP45N40DM2AG

STP45N40DM2AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 400 V, 0.058 Ohm typ., 39 A MDmesh DM2 Power MOSFET in TO-220 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 4.6199 ea
Line Total: USD 4619.9

970 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STP45N40DM2AG
STMicroelectronics

1000 : USD 4.6199

970 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4
Multiples : 1

Stock Image

STP45N40DM2AG
STMicroelectronics

4 : USD 10.2779
10 : USD 7.4944
50 : USD 6.6378
100 : USD 6.2401
200 : USD 5.8884
500 : USD 5.3668

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Height
Length
Product
Transistor Type
Type
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STP45N40DM2AG Automotive-grade N-channel 400 V, 0.063 typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STP45N40DM2AG 400 V 0.072 38 A 250 W Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP45N40DM2AG 45N40DM2 TO-220 Tube August 2016 DocID028082 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STP45N40DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID028082 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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