Product Information

STP40NF12

Name: STP40NF12
Brand: STMicroelectronics
SKU: STP40NF12_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STP40NF12 electronic component of STMicroelectronics

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MOSFET N-Ch 120 Volt 40 Amp

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1000 Multiples : 1000 STP40NF12 STMicroelectronics	1000 : USD 1.4123	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 STP40NF12 STMicroelectronics	1 : USD 3.8049 10 : USD 1.4403 25 : USD 1.313 100 : USD 1.134 500 : USD 0.956 1000 : USD 0.8127 2000 : USD 0.7968	N/A Obsolete

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Additional Infomation About Product

STP40NF12 N-channel 120V - 0.028 - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V R I DSS DS(on) D STP40NF12 120V <0.032 40A Exceptional dv/dt capability 100% avalanche tested 3 Application oriented characterization 2 1 TO-220 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore Internal schematic diagram suitable as primary switch in advanced high- efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Applications Switching application Order codes Part number Marking Package Packaging STP40NF12 P40NF12 TO-220 Tube January 2007 Rev 3 1/12 www.st.com 12Contents STP40NF12 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 8 4 Package mechanical data . 9 5 Revision history . 11 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 40 A 40 A
Vds - Drain-Source Breakdown Voltage 120 V 120 V
Rds On - Drain-Source Resistance 32 mOhms 32 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 150 W 150 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode Enhancement Enhancement
Configuration Single Single
Height 9.15 mm 9.15 mm
Length 10.4 mm 10.4 mm
Series N - Channel Stripfet N - Channel Stripfet
Transistor Type 1 N - Channel 1 N - Channel
Type Mosfet Mosfet
Width 4.6 mm 4.6 mm
Brand Stmicroelectronics Stmicroelectronics
Forward Transconductance - Min 40 S 40 S
Fall Time 28 ns 28 ns
Rise Time 63 ns 63 ns
Factory Pack Quantity : 1000 1000
Typical Turn-Off Delay Time 84 ns 84 ns
Typical Turn-On Delay Time 28 ns 28 ns