Product Information

STP40NF10

STP40NF10 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 35A; 150W; TO220-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.209 ea
Line Total: USD 1.21

265 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STP40NF10
STMicroelectronics

1 : USD 2.5863
10 : USD 2.2742
50 : USD 2.0789
100 : USD 1.8794
500 : USD 1.7888
1000 : USD 1.7485

265 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STP40NF10
STMicroelectronics

1 : USD 1.209
3 : USD 1.079
10 : USD 0.962
20 : USD 0.832
54 : USD 0.78

354 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10
Multiples : 1

Stock Image

STP40NF10
STMicroelectronics

10 : USD 1.5957
100 : USD 1.3234
250 : USD 1.2598
500 : USD 1.213
1000 : USD 1.1729
2000 : USD 1.1494

2279 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 12
Multiples : 1

Stock Image

STP40NF10
STMicroelectronics

12 : USD 1.0469
100 : USD 0.9907
500 : USD 0.9579
1000 : USD 0.9387

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
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STP40NF10 N-channel 100 V, 0.025 , 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code V R max. I DSS DS(on) D STP40NF10 100 V < 0.028 50 A Exceptional dv/dt capability Low gate charge 3 2 1 100% avalanche tested TO-220 Application Switching applications Description Figure 1. Internal schematic diagram This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique single feature siz strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STP40NF10 P40NF10 TO-220 Tube November 2010 Doc ID 11096 Rev 5 1/12 www.st.com 12Contents STP40NF10 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 11096 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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