Product Information

STP85N3LH5

STP85N3LH5 electronic component of STMicroelectronics

Datasheet
N-Channel 30 V 80A (Tc) 70W (Tc) Through Hole TO-220

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1

Stock Image

STP85N3LH5
STMicroelectronics

1000 : USD 1.3268
2000 : USD 1.3061
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STP85N3LH5
STMicroelectronics

1 : USD 1.9185
10 : USD 1.7188
25 : USD 1.621
100 : USD 1.3812
N/A

Obsolete
0 - WHS 3

MOQ : 28
Multiples : 1

Stock Image

STP85N3LH5
STMicroelectronics

28 : USD 1.17
40 : USD 1.17
150 : USD 1.17
500 : USD 1.17
2000 : USD 1.17
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

STP85N3LH5
STMicroelectronics

1 : USD 4.4014
10 : USD 1.5642
100 : USD 1.1702
500 : USD 0.987
1000 : USD 0.8254
5000 : USD 0.7653
10000 : USD 0.7353
25000 : USD 0.7187
N/A

Obsolete
0 - WHS 5

MOQ : 7
Multiples : 1

Stock Image

STP85N3LH5
STMicroelectronics

7 : USD 1.3083
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 , 80 A, DPAK, TO-220, IPAK STripFET V Power MOSFET Features Type V R max. I DSS DS(on) D 3 STD85N3LH5 3 1 2 1 STP85N3LH5 30 V < 0.005 80 A DPAK IPAK STU85N3LH5 R * Q industry benchmark DS(on) g Extremely low on-resistance R 3 DS(on) 2 1 High avalanche ruggedness TO-220 Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description th This product utilizes the 5 generation of design TM rules of STs proprietary STripFET technology. The lowest available R *Q , in the standard DS(on) g packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking Package Packaging STD85N3LH5 DPAK Tape and reel STP85N3LH5 85N3LH5 TO-220 Tube STU85N3LH5 IPAK July 2010 Doc ID 13833 Rev 7 1/16 www.st.com 16Contents STD85N3LH5, STP85N3LH5, STU85N3LH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit . 8 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 15 2/16 Doc ID 13833 Rev 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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