Product Information

STP8N120K5

STP8N120K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 1200 V, 0.62 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.555 ea
Line Total: USD 4.56

11890 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
11890 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

STP8N120K5
STMicroelectronics

1 : USD 4.555
10 : USD 4.51
25 : USD 4.465
100 : USD 4.42
250 : USD 4.205
500 : USD 4.1209
1000 : USD 4.1209
2000 : USD 4.1209

5 - WHS 2


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STP8N120K5
STMicroelectronics

1 : USD 8.132
10 : USD 7.1909
30 : USD 6.6159
100 : USD 6.1351

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif

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Additional Infomation About Product

STP8N120K5 Datasheet N-channel 1200 V, 1.65 typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package Features Order code V R max. I P DS DS(on) D TOT TAB STP8N120K5 1200 V 2.00 6 A 130 W Industrys lowest R x area DS(on) 3 2 Industrys best FoM (figure of merit) 1 TO-220 Ultra-low gate charge 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STP8N120K5 Product summary Order code STP8N120K5 Marking 8N120K5 Package TO-220 Packing Tube DS12529 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STP8N120K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 6 A C I D Drain current (continuous) at T = 100 C 3.5 A C (1) I Drain current pulsed 12 A DM P Total dissipation at T = 25 C 130 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 6 A, di/dt 100 A/s, V peak V SD DS (BR)DSS 3. V 960 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.96 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 1.7 A AR (pulse width limited by T ) jmax Single-pulse avalanche energy E 415 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD DS12529 - Rev 3 page 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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