JDH2S02FSTPL3 Toshiba

JDH2S02FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02FS UHF Band Mixer Unit: mm Suitable for reducing set size through the use of a two-pin small package 0.60.05 supporting high-density mounting A 0.2 0.10.05 Absolute Maximum Ratings 0.05 (Ta = 25C) 0.07 M A Characteristic Symbol Rating Unit +0.02 0.48 -0.03 Maximum (peak) reverse voltage V 10 V R Forward current I 10 mA F Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1L1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.0006 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.24 V F F Forward current I V = 0.5 V 2 mA F F Reverse current I V = 0.5 V 25 A R R Capacitance C V = 0.2 V, f = 1 MHz 0.3 pF T R Note: Signal level when capacitance is measured: Vsig = 20 mV rms Marking Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials. Start of commercial production 2004-09 2005-2017 1 2017-08-03 Toshiba Electronic Devices & Storage Corporation T 0.1 0.80.05 0.1 1.00.05JDH2S02FS IF-VF 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF(V) IR-VR 1.E+00 C 1.E-01 1.E-02 IR(A) 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 0 2 4 6 8 10 12 14 16 VR(V) 2005-2017 2 2017-08-03 Toshiba Electronic Devices & Storage Corporation IF(A)