STPS15L30CDJFTR STMicroelectronics

STPS15L30CDJFTR electronic component of STMicroelectronics
STPS15L30CDJFTR STMicroelectronics
STPS15L30CDJFTR Schottky Diodes & Rectifiers
STPS15L30CDJFTR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STPS15L30CDJFTR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS15L30CDJFTR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. STPS15L30CDJFTR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Low drop power Schottky rectifier
Datasheet: STPS15L30CDJFTR Datasheet (PDF)
Price (USD)
406: USD 0.6405 ea
Line Total: USD 260.04 
Availability : 1041
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
406$ 0.6405
413$ 0.6305
420$ 0.6205
426$ 0.6105
500$ 0.6003
1000$ 0.5676

Availability 1041
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 400
Multiples : 1
QtyUnit Price
400$ 0.6505
406$ 0.6405
413$ 0.6305
420$ 0.6205
426$ 0.6105
500$ 0.6003
1000$ 0.5676


Availability 1041
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 406
Multiples : 1
QtyUnit Price
406$ 0.6405
413$ 0.6305
420$ 0.6205
426$ 0.6105
500$ 0.6003
1000$ 0.5676

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS15L30CDJFTR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS15L30CDJFTR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS15L30CDJF Low drop power Schottky rectifier Features Very small conduction losses A1 Negligible switching losses Extremely fast switching Low forward voltage drop K Low thermal resistance A2 High avalanche capability specified Description K K Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT, this device is intended for use in low voltage, high frequency A1 inverters, free-wheeling and polarity protection A2 applications. A2 A1 PowerFLAT 5x6 STPS15L30CDJF Table 1. Device summary Symbol Value I 2 x 7.5 A F(AV) V 30 V RRM T (max) 150 C j V (typ) 0.34 V F TM: PowerFLAT is a trademark of STMicroelectronics May 2011 Doc ID 15664 Rev 4 1/7 www.st.com 7 Characteristics STPS15L30CDJF 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I Forward rms current 10 A F(RMS) Per diode 7.5 I Average forward current = 0.5 T = 140 C A F(AV) c Per device 15 I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p I Peak repetitive reverse current t = 2 s square F= 1 kHz 1 A RRM p P Repetitive peak avalanche power t = 1 s T = 25 C 2800 W ARM p j T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 2.5 R Junction to case th(j-c) Total 1.6 C/W R Coupling 0.7 th(c) When diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -- 1 mA j Reverse leakage (1) I V = V R R RRM current T = 125 C - 70 140 mA j T = 25 C I = 7.5 A - - 0.48 j F T = 125 C I = 7.5 A - 0.34 0.39 j F (1) V Forward voltage drop V F T = 25 C I = 15 A - - 0.57 j F T = 125 C I = 15 A - 0.44 0.51 j F 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.27 x I + 0.016 I F(AV) F (RMS) 2/7 Doc ID 15664 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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