STPS1H100MF STMicroelectronics

STPS1H100MF Datasheet High voltage power Schottky rectifier Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche capability specified Description STmite Flat The STPS1H100MF is a Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC/DC convertors. This device is housed in STmite flat package. It is ideal for lighting and telecom power applications. Product status link STPS1H100MF Product summary Symbol Value I 1 A F(AV) V 100 V RRM T (max.) 175 C j V (max.) 0.62 V F DS5836 - Rev 2 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS1H100MF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 2 A F(RMS) I Average forward current T = 160 C, = 0.5 1 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 50 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 108 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range 175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal parameters Symbol Parameter Max. value Unit R Junction to case 20 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 4 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 0.2 0.5 mA j T = 25 C - 0.77 j I = 1 A F T = 125 C - 0.58 0.62 j (2) V Forward voltage drop V F T = 25 C - 0.86 j I = 2 A F T = 125 C - 0.65 0.7 j 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.54 x I + 0.08 x I F(AV) F (RMS) DS5836 - Rev 2 page 2/9