STPS20120CT STMicroelectronics

STPS20120CT electronic component of STMicroelectronics
STPS20120CT STMicroelectronics
STPS20120CT Schottky Diodes & Rectifiers
STPS20120CT  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STPS20120CT Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS20120CT Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. STPS20120CT
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers POWER MOSFET
Datasheet: STPS20120CT Datasheet (PDF)
Price (USD)
1: USD 1.428 ea
Line Total: USD 1.43 
Availability : 17
  
Ship by Mon. 10 Nov to Wed. 12 Nov
QtyUnit Price
1$ 1.428
10$ 0.931
25$ 0.868
32$ 0.5978
88$ 0.5642
4000$ 0.5418

Availability 17
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 0
QtyUnit Price
1$ 1.428
10$ 0.931
25$ 0.868
32$ 0.5978
88$ 0.5642
4000$ 0.5418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS20120CT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS20120CT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS20120C Power Schottky rectifier Datasheet - production data Description This dual diode Schottky rectifier is suited for high . frequency switched mode power supplies. Packaged in DPAK, TO-220AB, TO-220AB narrow leads and IPAK, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode . Table 1. Device summary 2 % QDUURZ OHDGV 7 . ,3 Symbol Value . I 2 X 10 A F(AV) V 120 V RRM T (max) 175 C j V (typ) 0.70 V F . 2 % 7 . 3 Features High junction temperature capability Good trade-off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand November 2016 DocID11212 Rev 4 1/14 This is information on a product in full production. www.st.comCharacteristics STPS20120C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at T = 25 C unless otherwise stated) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 30 A F(RMS) T = 150 C per diode 10 c Average forward current, I A F(AV) = 0.5, square wave T = 145 C per device 20 c I Surge non repetitive forward current t = 10 ms sinusoidal 150 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 330 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j dPtot 1 1. condition to avoid thermal runaway for a diode on its own heatsink < Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Max. value Unit per diode 3 R Junction to case th(j-c) total 1.8 C/W R Coupling 0.6 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode1) = P(diode1) x R (per diode) + P(diode2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C -10A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 1.5 5 mA j T = 25 C -0.70 j I = 2.5 A F T = 125 C - 0.54 0.58 j T = 25 C -0.92 j (2) V Forward voltage drop I = 10 A V F F T = 125 C - 0.70 0.74 j T = 25 C -1.02 j I = 20 A F T = 125 C - 0.81 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.62 x I + 0.012 x I F(AV) F (RMS) 2/14 DocID11212 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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