STPS20170CG-TR STMicroelectronics

STPS20170C High voltage power Schottky rectifier Datasheet - production data Description A1 K A2 Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. K Table 1: Device summary Symbol Value A2 IF(AV) 2 x 10 A K A2 K A1 V 170 V RRM A1 Tj (max.) 175 C TO-220AB TO-220FPAB VF (typ.) 0.69 V K K A2 A2 A1 A1 DPAK Features High reverse voltage High junction temperature capability Avalanche specification with derating curves Insulated package TO-220FPAB Insulating voltage: 2000 V sine RMS ECOPACK 2 compliant component for DPAK on demand Benefits Can challenge bipolar ultrafast diodes with better dynamic characteristics October 2016 DocID10243 Rev 3 1/15 www.st.com This is information on a product in full production. Characteristics STPS20170C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V I Forward rms current 30 A F(RMS) TC = 155 C Per diode 10 TO-220AB / Average forward DPAK T = 150 C Total 20 C IF(AV) current A TC = 135 C Per diode 10 = 0.5, square wave TO-220FPAB T = 115 C Total 20 C tp = 10 ms I Surge non repetitive forward current 180 A FSM sinusoidal t = 10 s, p PARM Repetitive peak avalanche power 480 W T = 125 C j Tstg Storage temperature range -65 to +175 C (1) T Maximum operating junction temperature 175 j Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 2.2 TO-220AB / DPAK Total 1.3 R Junction to case th(j-c) Per diode 4.5 TO-220FPAB C/W Total 3.5 TO-220AB / DPAK 0.3 Rth(c) Coupling TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) 2/15 DocID10243 Rev 3