STPS2045CGY-TR STMicroelectronics

STPS2045C-Y Automotive power Schottky rectifier Features Very small conduction losses A1 Negligible switching losses K A2 Extremely fast switching Avalanche rated K AEC-Q101 qualified A2 A1 Description 2 D PAK STPS2045CGY Dual center tap Schottky rectifier suited for high frequency DC to DC converters. 2 Packaged in D PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection Table 1. Device summary applications. I 2 x 10 A F(AV) V 45 V RRM T 175 C j(max) V 0.57 V F(typ) May 2011 Doc ID 17262 Rev 1 1/7 www.st.com 7Characteristics STPS2045C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) I Average forward current = 0.5 T = 155 C Per diode 10 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 180 A FSM p P Repetitive peak avalanche power t = 1 s, T = 25 C 4000 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature -40 to +175 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistances parameters Symbol Parameter Value Unit Per diode 2.2 R Junction to case C/W th(j-c) Total 1.3 R Coupling 0.3 C/W th(c) When the diodes 1 and 2 are used simultaneously : T (diode 1) = P(diode 1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Test conditions Min. Typ. Max. Unit T = 25 C -- 100 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 7 15 mA j T = 125 C I = 10 A - 0.5 0.57 j F (1) V Forward voltage drop T = 25 C - - 0.84 V F j I = 20 A F T = 125 C - 0.65 0.72 j 1. Pulse test : t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.015 I F(AV) F (RMS) 2/7 Doc ID 17262 Rev 1