STPS20H100C Datasheet 100 V, 20 A power Schottky rectifier Features A1 K A2 Negligible switching losses High junction temperature capability Low leakage current K Good trade off between leakage current and forward voltage drop Avalanche rated A2 Insulated package: TO-220FPAB A2 K K A1 Insulating voltage = 2000 V sine A1 RMS TO-220AB TO-220FPAB ECOPACK 2 compliant component for DPAK on demand K Applications Switching diode SMPS A2 K DC/DC converter A1 2 I PAK LED lighting Adapter for notebook and game station K K Description A2 A2 A1 A1 Dual center tap Schottky rectifier designed for high frequency miniature switch mode 2 D PAK power supplies such as adaptors and on-board DC-DC converters. Product status link STPS20H100C Product summary I 2 x 10 A F(AV) V 100 V RRM T (max) 175 C j V (typ) 0.59 V F DS1216 - Rev 10 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPS20H100C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 30 A F(RMS) Per diode 10 2 2 T = 160 C TO-220AB, D PAK, I PAK C Per device 20 Average forward current = 0.5, square I A F(AV) wave T = 145 C Per diode 10 C TO-220FPAB T = 125 C Per device 20 C I Surge non repetitive forward current tp = 10 ms sinusoidal 250 A FSM P tp = 10 s, T = 125 C Repetitive peak avalanche power 775 W ARM j T Storage temperature range -65 to + 175 C stg (1) T + 175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Value Unit 2 2 TO-220AB, D PAK, I PAK 1.6 Per diode TO-220FPAB 4 R Junction to case C/W th(j-c) 2 2 0.9 TO-220AB, D PAK, I PAK Total TO-220FPAB 3.2 2 2 0.15 TO-220AB, D PAK, I PAK R Coupling - C/W th(c) TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 4.5 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 2 6 mA j I = 10 A - 0.77 F T = 25 C j I = 20 A - 0.88 F (2) V Forward voltage drop V F I = 10 A - 0.59 0.64 F T = 125 C j I = 20 A - 0.67 0.73 F DS1216 - Rev 10 page 2/18