STPS20H100CGY-TR STMicroelectronics

STPS20H100C-Y Automotive power Schottky rectifier Datasheet production data Description Dual center tap Schottky rectifier designed for . high frequency miniature switched mode power supplies such as adaptators and on board DC/DC converters for automotive applications Table 1. Device summary Symbol Value I 2 x 10 A F(AV) V 100 V RRM T 175 C . 3 j(max) V 0.59 V F (Typ) Features Negligible switching losses High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Avalanche rated AEC-Q101 qualified. PPAP capable November 2014 DocID027082 Rev 1 1/8 This is information on a product in full production. www.st.comCharacteristics STPS20H100C-Y 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 30 A F(RMS) per diode 10 I Average forward current, = 0.5, T = 160 C A F(AV) c per device 20 I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p (1) P Repetitive peak avalanche power t = 10 s, T = 125 C 780 W ARM p j T Storage temperature range -65 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 1.6 R Junction to case th(j-c) per device 0.9 C/W R coupling 0.15 th(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit = 25 C -- 4.5 A T j (1) I Reverse leakage current V = V R R RRM T = 125 C - 2 6 mA j T = 25 C - - 0.77 j I = 10 A F T = 125 C - 0.59 0.64 j (2) V Forward voltage drop V F T = 25 C - - 0.88 j I = 20 A F T = 125 C - 0.67 0.73 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2/8 DocID027082 Rev 1