Product Information

STPS20M60D

STPS20M60D electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers PWR Schottky Rec 20A 60V 0.37V Vf

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8192 ea
Line Total: USD 0.82

58200 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58200 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STPS20M60D
STMicroelectronics

1 : USD 0.794

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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STPS20M60 Power Schottky rectifier Features A K High current capability Avalanche rated Low forward voltage drop K High frequency operation Description The STPS20M60D is a single diode Schottky rectifier, suited for high frequency switch mode A power supply. K Packaged in TO-220AC,this device is intended to TO-220AC be used in notebook, game station and desktop STPS20M60D adapters, providing in these applications a good efficiency at both low and high load. (a) Figure 1. Electrical characteristics Table 1. Device summary Symbol Value I V I 20 A F(AV)Forwar I V 60 V RRM 2 x I O X V (typ) 0.37 V F IF T (max) 150 C j I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 11. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics November 2011 Doc ID 022037 Rev 1 1/7 www.st.com 7Characteristics STPS20M60 1 Characteristics Table 2. Absolute ratings (limiting values, at T = 25 C unless otherwise amb specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 60 A F(RMS) I Average forward current, = 0.5 T = 135 C 20 A F(AV) c I Surge non repetitive forward current t = 10 ms sine-wave 400 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 26400 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 99 A 80 V ARM p j AR avalanche voltage Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 99 A 80 V ASM p j AR avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 11 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 1.0 C/W th(j-c) 2/7 Doc ID 022037 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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