STPS3030CR STMicroelectronics

STPS3030CR electronic component of STMicroelectronics
STPS3030CR STMicroelectronics
STPS3030CR Schottky Diodes & Rectifiers
STPS3030CR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STPS3030CR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS3030CR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No.STPS3030CR
Manufacturer:STMicroelectronics
Category:Schottky Diodes & Rectifiers
Description:Schottky Diodes & Rectifiers LD PWR SCHOT
Datasheet:STPS3030CR Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 2.725 ea
Line Total: USD 2.72 
Availability : 948
  
Ship by Mon. 22 Jun to Wed. 24 Jun
QtyUnit Price
1$ 2.725
10$ 1.668
100$ 1.056
500$ 0.8943
1000$ 0.781
2000$ 0.7645
5000$ 0.726
  

Availability948
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.725
10$ 1.668
100$ 1.056
500$ 0.8943
1000$ 0.781
2000$ 0.7645
5000$ 0.726

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS3030CR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS3030CR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS3030/CT/CG/CR Low drop power Schottky rectifier Main product characteristics A1 I 2 x 15 A K F(AV) V 30 V RRM A2 T (max) 150 C j K V (max) 0.42 V F Features and benefits A2 Very small conduction losses A2 K Negligible switching losses A1 A1 Extremely fast switching 2 D PAK TO-220AB Low forward voltage drop for higher efficiency STPS3030CG STPS3030CT Low thermal resistance Avalanche capability specified Description Dual Schottky rectifier suited for switch mode A2 power supply and high frequency DC to DC K A1 converters. 2 I PAK 2 2 Packaged in TO-220AB, D PAK and I PAK, this STPS3030CR device is intended for use in low voltage high frequency inverters, free-wheeling and polarity j protection applications. October 2006 Rev 4 1/9 www.st.com 9Characteristics STPS3030CT/CG/CR 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward current 30 A F(RMS) T = 135 C Per diode 15 c I Average forward current A F(AV) = 0.5 Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p I Peak repetitive reverse current t = 2 s square F= 1 kHz 1 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 4100 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25 C) 10000 V/s R j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 2. Thermal resistance Symbol Parameter Value Unit Per diode 1.2 2 2 R Junction to case TO-220AB - D PAK - I PAK th(j-c) Total 0.8 C/W R Coupling 0.4 th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 0.23 1.0 j (1) I Reverse leakage current V = V mA R R RRM T = 125 C 125 180 j T = 25 C I = 15 A 0.44 0.49 j F T = 125 C I = 15 A 0.36 0.40 j F (1) V Forward voltage drop V F T = 25 C I = 30 A 0.53 0.58 j F T = 125 C I = 30 A 0.49 0.53 j F 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.26 x I + 0.0107 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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