STPS30L45C Low drop power Schottky rectifier A1 Features K low forward voltage drop meaning very small A2 conduction losses K K low switching losses allowing high frequency operation low thermal resistance A2 A2 avalanche rated A1 A1 2 2 insulated package TO-220FPAB: I PAK D PAK STPS30L45CR STPS30L45CG insulating voltage = 2000 V DC capacitance = 45 pF avalanche capability specified Description A2 A2 K K Dual center tap Schottky rectifier suited for A1 A1 switched mode power supplies and high TO-220AB TO-247 frequency DC to DC converters. STPS30L45CT STPS30L45CW Packaged in TO-247, TO-220AB, TO-220FPAB, 2 2 D PAK and I PAK this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. A2 K A1 TO-220FPAB STPS30L45CFP Table 1. Device summary I 2 x 15 A F(AV) V 45 V RRM T (max) 150 C j V (max) 0.5 V F October 2010 Doc ID 8002 Rev 4 1/12 www.st.com 12Characteristics STPS30L45C 1 Characteristics Table 2. Absolute Ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) TO-220FPAB T =110 C, = 0.5 c Per diode 15 Average forward I A F(AV) TO-220AB, TO-247, current Per device 30 T = 135 C, = 0.5 2 c I PAK, D PAK 2 I Surge non repetitive forward current t = 10 ms Sinusoidal 220 A FSM p I Repetitive peak reverse current t = 2 s square F = 1 kHz 1 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 6000 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 4 TO-220FPAB Total 3.2 R Junction to case C/W th(j-c) Per diode 1.60 2 2 TO-220AB, TO-247, I PAK, D PAK Total 0.85 TO-220FPAB 2.5 R Coupling C/W th(c) 2 2 TO-220AB, TO-247, I PAK, D PAK 0.10 When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/12 Doc ID 8002 Rev 4