STPS30L30DJF-TR STMicroelectronics

STPS30L30DJF-TR electronic component of STMicroelectronics
STPS30L30DJF-TR STMicroelectronics
STPS30L30DJF-TR Schottky Diodes & Rectifiers
STPS30L30DJF-TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STPS30L30DJF-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS30L30DJF-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. STPS30L30DJF-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers High Effeciency PWR Schottky Diode
Datasheet: STPS30L30DJF-TR Datasheet (PDF)
Price (USD)
3000: USD 0.5732 ea
Line Total: USD 1719.6 
Availability : 5820
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3000$ 0.5732
6000$ 0.5538
9000$ 0.5481

Availability 5820
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.5732
6000$ 0.5538
9000$ 0.5481


Availability 2733
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.0682
10$ 1.6912
30$ 1.003
100$ 0.844
500$ 0.7749
1000$ 0.743

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS30L30DJF-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS30L30DJF-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS30L30DJF High efficiency power Schottky diode Datasheet production data Features Low forward voltage drop A Very small conduction losses Negligible switching losses Avalanche rated K Extremely fast switching A Low thermal resistance 1 mm package thickness ECOPACK 2 compliant component K K Description Single Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. A Packaged in PowerFLAT 5x6, this device is A intended for use in low voltage high frequency inverters. PowerFLAT 5x6 STPS30L30DJF Table 1. Device summary Symbol Value I 30 A F(AV) V 30 V RRM T (max) 150 C j V (typ) 0.30 V F TM: PowerFLAT is a trademark of STMicroelectronics March 2012 Doc ID 022946 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics STPS30L30DJF 1 Characteristics Table 2. Absolute ratings (limiting values with anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I Forward rms current 45 A F(RMS) I Average forward current = 0.5 T = 110 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p P Repetitive peak avalanche power t = 1 s, T = 25 C 1300 W ARM p j Maximum repetitive peak avalanche t <1 s, T < 150 C, p j V 35 V ARM voltage I < 11 A AR T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 2 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 0.75 mA j Reverse leakage (1) I V = 30 V R R current T = 125 C - 100 230 mA j T = 25 C I = 15 A - - 0.44 j F T = 125 C I = 15 A - 0.30 0.35 j F (1) V Forward voltage drop V F T = 25 C I = 30 A - - 0.51 j F T = 125 C I = 30 A - 0.38 0.45 j F 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.27 x I + 0.006 x I F(AV) F (RMS) 2/7 Doc ID 022946 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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