STPS3060CW STMicroelectronics

STPS3060CW HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K I 2x15A F(AV) A2 V 60 V RRM Tj (max) 150C V (max) 0.75 V F FEATURES AND BENEFITS n Negligible switching losses A2 K n Low forward voltage drop A1 n Low capacitance n High reverse avalanche surge capability. TO-247 STPS3060CW DESCRIPTION High voltage dual Schottky rectifier suited for switchmode power supplies and other power converters. Packaged in TO-247, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 60 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current Per diode I 15 A F(AV) Average forward current = 0.5 Tc = 130C Per diode 30 Per device I 200 A FSM Surge non repetitive forward current tp = 10 ms Per diode Sinusoidal I 1A RRM Repetitive peak reverse current tp=2 s Per diode F=1kHz I 1A RSM Non repetitive peak reverse current tp = 100s Per diode T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 1000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a October 2003 - Ed: 1A 1/4STPS3060CW THERMAL RESISTANCES Symbol Parameter Value Unit R Per diode 1.5 C/W th(j-c) Junction to case Total 0.8 R Coupling 0.1 C/W th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 150 A R Reverse leakage Tj = 25C V =V R RRM current 100 mA Tj = 125C V * 0.85 V F Forward voltage drop Tj = 25CI =15A F 0.65 0.75 Tj = 125C I =15A F 1.05 Tj=25CI =30A F 0.80 0.90 Tj = 125C I =30A F Pulse test: * tp = 5ms, <2% **tp = 380s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.6xI + 0.01 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current Fig. 2: Average forward current versus ambient (per diode). temperature (=0.5, per diode). P (W) I (A) F(AV) F(AV) 16 17 R=R = 0.1 = 0.2 16 th(j-a) th(j-I) = 0.5 15 14 = 0.05 14 13 12 12 11 = 1 10 10 9 R =15C/W th(j-a) 8 8 7 6 6 5 T 4 4 T 3 2 2 T (C) amb I (A) =tp/T tp F(AV) 1 =tp/T tp 0 0 02468 10 12 14 16 18 20 0 25 50 75 100 125 150 2/4