X-On Electronics has gained recognition as a prominent supplier of STPS30H100DJF-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS30H100DJF-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS30H100DJF-TR STMicroelectronics

STPS30H100DJF-TR electronic component of STMicroelectronics
STPS30H100DJF-TR STMicroelectronics
STPS30H100DJF-TR Schottky Diodes & Rectifiers
STPS30H100DJF-TR  Semiconductors

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See Product Specifications
Part No. STPS30H100DJF-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: STMicroelectronics Schottky Diodes & Rectifiers Pwr Schottky 30A 100VRRM 0.56VF
Datasheet: STPS30H100DJF-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8822 ea
Line Total: USD 1.88 
Availability - 2217
Ship by Fri. 16 May to Wed. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2217
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 1.8822
10 : USD 1.5562
30 : USD 0.9313
100 : USD 0.7938
500 : USD 0.7333
1000 : USD 0.7059

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Tj - Operating Junction Temperature
Vr - Reverse Voltage
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS30H100DJF-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS30H100DJF-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS30H100DJF Power Schottky rectifier Datasheet - production data A Description A Power Schottky rectifier suited for switch mode K A power supply and high frequency DC to DC converters. A Housed in a PowerFLAT package, this device K K is intended to be used in adaptors requiring good efficiency at both low and high load. Its low profile was especially designed to be used in applications with space-saving constraints. A A Table 1: Device summary PowerFLAT 5x6 Symbol Value IF(AV) 30 A V 100 V RRM Features VF (typ.) 0.56 V Low forward voltage drop T 150 C j Very low conduction losses Negligible switching losses Extremely fast switching Low thermal resistance TM: PowerFLAT is a trademark of High specified avalanche capability STMicroelectronics High integration Thin package: 1 mm ECOPACK 2 compliant component June 2017 DocID023024 Rev 2 1/10 www.st.com This is information on a product in full production. Characteristics STPS30H100DJF 1 Characteristics Table 2: Absolute ratings (limiting values, anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 45 A F(RMS) Average forward current I T = 100 C 30 A F(AV) C = 0.5, square wave I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 265 W Maximum repetitive peak avalanche t < 1 s, T < 150 C, p j VARM 120 V voltage I < 9.3A AR Tstg Storage temperature range -65 to +175 C (1) T Operating junction temperature range 150 j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Value Unit R Junction to case 2 C/W th(j-c) Table 4: Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 6 A j (1) IR Reverse leakage current VR = VRRM Tj = 125 C - 2.5 6.5 mA T = 25 C - 0.76 j IF = 15 A Tj = 125 C - 0.56 0.62 (1) V Forward voltage drop V F T = 25 C - 0.84 j IF = 30 A Tj = 125 C - 0.63 0.71 Notes: (1) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.60 x I + 0.00367 x I F(AV) F (RMS) 2/10 DocID023024 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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