STPS30L60C Power Schottky rectifier Datasheet production data Features A1 Low forward voltage drop K A2 Negligible switching losses Low thermal resistance K Avalanche capability specified A2 A2 Description K A1 A1 2 TO-220FPAB These dual center tap Schottky rectifiers are D PAK STPS30L60CFP STPS30L60CG suited for switched mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, TO-220AB narrow 2 2 leads, TO-220AB, D PAK, I PAK and TO-247, this device is intended for use in high frequency inverters. A2 A2 K (a) K Figure 1. Electrical characteristics A1 A1 2 I PAK TO-220AB I STPS30L60CR V STPS30L60CTForwar I 2 x I K O X I F I O X V RRM A2 V V R AR A2 V K A1 A1 I R K V V V V F(I ) F F(2xI ) To o o TO-220AB narrow leads TO-247Revers STPS30L100CTN STPS30L60CW I AR Table 1. Device summary Symbol Value I 2 x 15 A F(AV) V 60 V RRM T 150 C j (max) V 0.56 V F (max) a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12 V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics June 2012 Doc ID 6479 Rev 10 1/13 This is information on a product in full production. www.st.com 13Characteristics STPS30L60C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 30 A F(RMS) TO-220AB narrow leads, Per diode 15 2 2 TO-220AB, I PAK, D PAK, T = 130 C c Per device 30 TO-247, = 0.5 I Average forward current A F(AV) TO-220FPAB, = 0.5 Per diode 15 T = 110 C c Per device 30 I Surge non repetitive forward current t = 10 ms, sinusoidal 230 A FSM p t = 2 s square, F = 1 p I Repetitive peak reverse current 2A RRM kHz (1) P Repetitive peak avalanche power t = 1 s, T = 25 C 7800 W p j ARM t < 1 s, T < 150 C, (2) p j V Maximum repetitive peak avalanche voltage 80 V ARM I < 29 A AR t < 1 s, T < 150 C, (2) p j V Maximum single pulse peak avalanche voltage 80 V ASM I < 29 A AR T Storage temperature range -65 to + 175 C stg (3) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise reverse voltage 10000 V/s 1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 12. 1 dPtot < 3. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.5 TO-220AB narrow leads, 2 2 TO-220AB, I PAK, D PAK, TO-247 Total 0.8 R Junction to case th(j-c) Per diode 4.7 TO-220FPAB C/W Total 3.95 2 TO-220AB narrow leads, TO-220AB, I PAK, 0.1 2 D PAK, TO-247 R Coupling th(c) TO-220FPAB 3.2 When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode2) x R j th(j-c) th(c) 2/13 Doc ID 6479 Rev 10