STPS360AFY STMicroelectronics

STPS360-Y Automotive power Schottky rectifier Datasheet - production data Description A K This high voltage Schottky barrier rectifier device is packaged in SOD128Flat and designed for high frequency miniature switched mode power supplies and on board DC to DC converters for automotive applications. Table 1: Device summary Symbol Value IF(AV) 3 A SOD128Flat VRRM 60 V T (max.) 175 C j VF(typ.) 0.49 V Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche specification ECOPACK compliant component AEC-Q101 PPAP capable V guaranteed from -40 to +175 C RRM June 2016 DocID029422 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STPS360-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 60 V T = 140 C, = 0.5, square pulse IF(AV) Average forward current L 3 A Surge non repetitive I t = 10 ms sinusoidal 65 A FSM p forward current Repetitive peak PARM tp = 10 s, Tj = 125 C 140 W avalanche power Tstg Storage temperature range -65 to +175 C (1) T Operating junction temperature range -40 to +175 C j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit R Junction to lead 16 C/W th(j-l) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 150 A (1) I Reverse leakage current V = 60 V R R Tj = 125 C - 20 30 mA Tj = 25 C - 0.61 I = 3 A F T = 125 C - 0.49 0.58 j (2) VF Forward voltage drop V Tj = 25 C - 0.80 I = 6 A F T = 125 C - 0.62 0.72 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.44 x IF(AV) + 0.047 x IF (RMS) 2/8 DocID029422 Rev 1