STPS3H100AFY Automotive high voltage power Schottky rectifier Datasheet - production data Description A K This high voltage Schottky barrier rectifier device is packaged in SOD128Flat and designed for high frequency miniature switched mode power supplies and for board DC to DC converters for automotive applications. Table 1: Device summary Symbol Value IF(AV) 3 A SOD128Flat VRRM 100 V T (max.) 175 C j VF(typ.) 0.57 V Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche specification ECOPACK compliant component AEC-Q101 PPAP capable V guaranteed from -40 to +175 C RRM June 2016 DocID029434 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STPS3H100AFY 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 100 V T = 140 C, = 0.5, square pulse IF(AV) Average forward current L 3 A Surge non repetitive forward I t = 10 ms sinusoidal 75 A FSM p current Repetitive peak avalanche PARM tp = 10 s, Tj = 125 C 172 W power Tstg Storage temperature range -65 to +175 C (1) T Operating junction temperature range -40 to +175 C j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit R Junction to lead 16 C/W th(j-l) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 1.5 A (1) I Reverse leakage current V = 100 V R R Tj = 125 C - 0.6 1.7 mA Tj = 25 C - 0.76 I = 3 A F T = 125 C - 0.57 0.61 j (2) VF Forward voltage drop V Tj = 25 C - 0.84 I = 6 A F T = 125 C - 0.64 0.68 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.54 x IF(AV) + 0.023 x IF (RMS) 2/8 DocID029434 Rev 1