X-On Electronics has gained recognition as a prominent supplier of STPS4030CT Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS4030CT Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the STPS4030CT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS4030CT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
STPS4030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 I 2x20A F(AV) K V 30 V RRM A2 Tj (max) 150C K V (max) 0.40 V F FEATURES AND BENEFITS A2 A2 K n VERY SMALL CONDUCTION LOSSES A1 A1 n NEGLIGIBLE SWITCHING LOSSES TO-220AB 2 D PAK n EXTREMELY FAST SWITCHING STPS4030CT STPS4030CG n LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION A2 Dual Schottky rectifier suited for switch Mode K A1 Power Supply and high frequency DC to DC 2 converters. I PAK 2 2 Packaged in TO-220AB, D PAK and I PAK, this STPS4030CR device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 32 A F(RMS) RMS forward current I 20 A F(AV) Average forward Tc = 130C Per diode 40 current = 0.5 Per device I 220 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 2A RRM Peak repetitive reverse current tp=2 s square F=1kHz P 5300 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage (rated V , Tj = 25C) R dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 2A 1/6STPS4030CT/CG/CR THERMAL RESISTANCES Symbol Parameter Value Unit 2 2 R Per diode 1.6 C/W th(j-c) Junction to case TO-220AB - D PAK-I PAK Total 0.85 R Coupling 0.1 C/W th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 0.50 1.0 mA R Reverse leakage Tj = 25C V =V R RRM 170 350 current Tj = 125C V * 0.44 0.49 V F Forward voltage drop Tj = 25CI =20A F 0.35 0.40 Tj = 125C I =20A F 0.52 0.61 Tj=25CI =40A F 0.46 0.55 Tj = 125C I =40A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.25xI + 0.0075 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature( = 0.5). P(W) IF(av)(A) 12 22 = 0.1 Rth(j-a)=Rth(j-c) = 0.2 = 0.5 = 0.05 20 10 18 16 = 1 8 14 12 6 10 8 4 Rth(j-a)=50C/W 6 T 4 2 IF(av)(A) 2 Tamb(C) =tp/T tp 0 0 0 5 10 15 20 25 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(ARMtp) PARM(1s) PARM(25C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(C) t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/6
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