Product Information

STPS40L15CT

STPS40L15CT electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 2X20 Amp 15 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8: USD 1.0607 ea
Line Total: USD 8.49

582 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
30 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STPS40L15CT
STMicroelectronics

1 : USD 2.886
3 : USD 2.587
9 : USD 1.989
23 : USD 1.872

582 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8
Multiples : 1

Stock Image

STPS40L15CT
STMicroelectronics

8 : USD 1.0607
10 : USD 0.9856
100 : USD 0.9562
500 : USD 0.9371

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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STPS40L15C Low drop OR-ing power Schottky diode Features A1 Very low forward voltage drop for less power dissipation and reduced heatsink size K Reverse voltage suited to OR-ing of 3 V, 5 V A2 and 12 V rails Avalanche capability specified K Description A2 A2 Dual center tap schottky rectifier packaged in K K A1 TO-220AB and TO-247, this device is especially A1 intended for use as OR-ing diode in fault tolerant TO-220AB TO-247 power supply equipments. STPS40L15CT STPS40L15CW Table 1. Device summary Symbol Value I 2x20 A F(AV) V 15 V RRM T 125 C j (max) V 0.33 V F (max) July 2011 Doc ID 4926 Rev 6 1/8 www.st.com 8Characteristics STPS40L15C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 15 V RRM I Forward current rms 30 A F(RMS) Total 40 T = 140 C case I Average forward current A F(AV) = 1 Per diode 20 Surge non repetitive forward I t = 10 m, Sinusoidal 310 A FSM p current I Peak repetitive reverse current t = 2 s, F= 1 kHz 2 A RRM p I Non repetitive peak reverse current t = 100 s 3 A RSM p P Repetitive peak avalanche power t = 1s, T = 25 C 13140 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 125 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.6 R Junction to case C/W th(j-c) Total 0.85 RCoupling 0.1 C/W th (c) Table 4. Static electrical characteristics (Per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 6 Reverse leakage j (1) I V = V mA R R RRM current T = 100 C 200 500 j T = 25 C I = 19 A 0.41 j F T = 25 C I = 40 A 0.52 j F (1) V Forward voltage drop V F T = 125 C I = 19 A 0.28 0.33 j F T = 125 C I = 40 A 0.42 0.50 j F 1. Pulse test : t = 380 s, < 2% p To evaluate the conduction losses use the following equation : 2 P = 0.18 x I + 0.008 I F(AV) F (RMS) 2/8 Doc ID 4926 Rev 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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