Product Information

STPS4045CW

STPS4045CW electronic component of STMicroelectronics

Datasheet
Diode: Schottky rectifying; THT; 45V; 2x20A; TO247; Package: tube

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.937 ea
Line Total: USD 1.94

58 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STPS4045CW
STMicroelectronics

1 : USD 1.937
3 : USD 1.729
10 : USD 1.534
13 : USD 1.326
34 : USD 1.261

     
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Mounting
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Load Current
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Max Forward Voltage
Max Off-State Voltage
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STPS4045C Power Schottky rectifiers Features A1 Very small conduction losses K Negligible switching losses A2 Extremely fast switching Low thermal resistance Avalanche capability specified ECOPACK 2 compliant component (STPS4045CT) A2 A2 K K A1 A1 Description TO-247 TO-220AB STPS4045CW STPS4045CT This dual center tap Schottky rectifier is suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-247 or TO-220AB this device is intended for use in low voltage, high frequency Table 1. Device summary inverters, free wheeling and polarity protection Symbol Value applications. I 2 x 20 A F(AV) V 45 V RRM T 175 C j (max) V 0.63 V F (max) November 2009 Doc ID 4605 Rev 5 1/8 www.st.com 8Characteristics STPS4045C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) T = 150 C, = 0.5 Per diode 20 C TO-247 A T = 145 C, = 0.5 Per device 40 C I Average forward current F(AV) T = 145 C, = 0.5 Per diode 20 C TO-220AB A T = 130 C, = 0.5 Per device 40 C I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p I Repetitive peak reverse current t = 2 s square F=1 kHz 1A p RRM t = 100 s square I Non repetitive peak reverse current 3A RSM p t = 1 s T = 25 C P Repetitive peak avalanche power 6000 W p j ARM T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 175 C j dV/dt Critical rate of rise reverse voltage 10000 V/s 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.5 TO-247 Total 0.8 R Junction to case th (j-c) Per diode 1.8 TO-220AB C/W Total 1.3 TO-247 0.1 R Coupling th (c) TO-220AB 0.8 When the diodes 1 and 2 are used simultaneously : T (diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/8 Doc ID 4605 Rev 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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