Product Information

STPS41L30CG-TR

STPS41L30CG-TR electronic component of STMicroelectronics

Datasheet
Diode: Schottky rectifying; SMD; 30V; 2x20A; D2PAK; Package: tube
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.2211 ea
Line Total: USD 1221.1

970 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
99 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STPS41L30CG-TR
STMicroelectronics

1 : USD 1.3182
10 : USD 1.2918
25 : USD 1.2918
100 : USD 1.2918

970 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STPS41L30CG-TR
STMicroelectronics

1000 : USD 1.2211
2000 : USD 1.1966
5000 : USD 1.1966
10000 : USD 1.1966

1 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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STPS41L30CG-TR
STMicroelectronics

1 : USD 2.288
5 : USD 2.054
10 : USD 1.664
27 : USD 1.573
250 : USD 1.534

970 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STPS41L30CG-TR
STMicroelectronics

1000 : USD 1.2211
2000 : USD 1.1966

15520 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STPS41L30CG-TR
STMicroelectronics

1000 : USD 1.3447
2000 : USD 1.3178

99 - WHS 6


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 7
Multiples : 1

Stock Image

STPS41L30CG-TR
STMicroelectronics

7 : USD 1.3182
10 : USD 1.2918

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Load Current
Max Off-State Voltage
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Additional Infomation About Product

STPS41L30CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS A1 I 2x20A F(AV) K V 30 V A2 RRM Tj (max) 150 C V (max) 0.38 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES A2 A2 K K n NEGLIGIBLE SWITCHING LOSSES A1 A1 n EXTREMELY FAST SWITCHING 2 TO-220AB n LOW FORWARD VOLTAGE DROP I PAK STPS41L30CT STPS41L30CR n HIGH AVALANCHE CAPABILITY n LOW THERMAL RESISTANCE K n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION A2 Dual center tab Schottky rectifier suited for Switch A1 Mode Power Supply and high frequency DC to DC converters. 2 D PAK 2 2 Packaged in D PAK, I PAK and TO-220ABthis STPS41L30CG device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 20 F(AV) Average forward current Tc = 135C Per diode A = 0.5 40 Per device I 220 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal I 1A RRM Peak repetitive reverse current tp=2 s square F=1kHz P 6500 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T -65 to+175 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed : 3A 1/6STPS41L30CG / STPS41L30CT / STPS41L30CR THERMAL RESISTANCES Symbol Parameter Value Unit R Per diode 1.5 C/W th(j-c) Junction to case Total 0.8 R 0.1 th(c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 1.5 mA R Reverse leakage current Tj = 25C V =V R RRM 170 350 mA Tj = 125C V * 0.48 V F Forward voltage drop Tj = 25CI =20A F 0.35 0.38 Tj = 125C I =20A F 0.57 Tj=25CI =40A F 0.47 0.49 Tj = 125C I =40A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.27xI + 0.0055 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature ( = 0.5). PF(av)(W) IF(av)(A) 11 25 = 0.5 10 = 0.2 Rth(j-a)=Rth(j-c) 9 20 = 0.1 8 = 1 = 0.05 7 15 6 5 10 4 Rth(j-a)=50C/W 3 T T 5 2 1 Tamb(C) IF(av)(A) =tp/T tp =tp/T tp 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/6

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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