STPS41L30CG-TR STMicroelectronics

STPS41L30CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS A1 I 2x20A F(AV) K V 30 V A2 RRM Tj (max) 150 C V (max) 0.38 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES A2 A2 K K n NEGLIGIBLE SWITCHING LOSSES A1 A1 n EXTREMELY FAST SWITCHING 2 TO-220AB n LOW FORWARD VOLTAGE DROP I PAK STPS41L30CT STPS41L30CR n HIGH AVALANCHE CAPABILITY n LOW THERMAL RESISTANCE K n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION A2 Dual center tab Schottky rectifier suited for Switch A1 Mode Power Supply and high frequency DC to DC converters. 2 D PAK 2 2 Packaged in D PAK, I PAK and TO-220ABthis STPS41L30CG device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 20 F(AV) Average forward current Tc = 135C Per diode A = 0.5 40 Per device I 220 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal I 1A RRM Peak repetitive reverse current tp=2 s square F=1kHz P 6500 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T -65 to+175 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed : 3A 1/6STPS41L30CG / STPS41L30CT / STPS41L30CR THERMAL RESISTANCES Symbol Parameter Value Unit R Per diode 1.5 C/W th(j-c) Junction to case Total 0.8 R 0.1 th(c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 1.5 mA R Reverse leakage current Tj = 25C V =V R RRM 170 350 mA Tj = 125C V * 0.48 V F Forward voltage drop Tj = 25CI =20A F 0.35 0.38 Tj = 125C I =20A F 0.57 Tj=25CI =40A F 0.47 0.49 Tj = 125C I =40A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.27xI + 0.0055 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature ( = 0.5). PF(av)(W) IF(av)(A) 11 25 = 0.5 10 = 0.2 Rth(j-a)=Rth(j-c) 9 20 = 0.1 8 = 1 = 0.05 7 15 6 5 10 4 Rth(j-a)=50C/W 3 T T 5 2 1 Tamb(C) IF(av)(A) =tp/T tp =tp/T tp 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/6