STPS40M100C Datasheet 100 V, 40 A power Schottky rectifier A1 (1) Features K (2) A2 (3) High current capability Avalanche rated K Low forward voltage drop current K High frequency operation ECOPACK 2 compliant A2 A2 K K A1 A1 IPAK TO-220AB Applications Switching diode SMPS DC/DC converter LED lighting Desktop power supply Notebook adapter Description This dual diode Schottky rectifier is suited for high frequency switch mode power supply. 2 Packed in TO-220AB and I Pak, the STPS40M100C is optimized for use in notebook, game station and desktop adaptors, providing in these applications a good Product status link efficiency at both low and high load. STPS40M100C Product summary Symbol Value I 2 x 20 A F(AV) V 100 V RRM T (max.) 150 C j V (typ.) 0.585 V F DS6170 - Rev 4 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPS40M100C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 60 A F(RMS) T = 130 C Per diode 20 C I Average forward current, = 0.5 A F(AV) T = 120 C Per device 40 C I Surge non repetitive forward current t = 10 ms sinusoidal 400 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 1668 W ARM p j T Storage temperature range -65 to +175 C stg (1) T 150 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Value Unit Per diode 1.40 R Junction to case th(j-c) Total 0.95 C/W R Coupling 0.50 th(c) When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 70 A j V = V R RRM T = 125 C - 15 70 mA j (1) I Reverse leakage current R T = 25 C 40 A j V = 70 V R T = 125 C 7.5 40 mA j T = 125 C I = 5 A - 0.415 0.500 j F T = 125 C I = 10 A - 0.500 0.560 j F (2) V Forward voltage drop V F T = 25 C - 0.780 j I = 20 A F T = 125 C - 0.585 0.640 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 0.560 x I + 0.004 x I F(AV) F (RMS) DS6170 - Rev 4 page 2/12