STPS60L45CW STMicroelectronics

STPS60L45CW LOW DROP POWER SCHOTTKY RECTIFIER A1 MAJOR PRODUCTS CHARACTERISTICS K I 2x30A F(AV) A2 Tj (max) 150C V 45 V RRM V (max) 0.50 V F FEATURES AND BENEFITS A2 n VERY SMALL CONDUCTION LOSSES K n NEGLIGIBLE SWITCHING LOSSES A1 n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP TO-247 n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap schottky barrier rectifier suited for 5V output in off line AC/DC power supplies. Packaged in TO-247, this device is intended for use in low voltage, high frequency converters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 45 V RRM Repetitive peak reverse voltage I 50 A F(RMS) RMS forward current I 30 A F(AV) Average forward current Tc = 135C Per diode 60 = 0.5 Per device I 600 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 2A RRM Repetitive peak reverse current tp=2s square F=1kHz I 4A RSM Non repetitive peak reverse current tp = 100 s square P 12300 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature (*) dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3C 1/4STPS60L45CW THERMAL RESISTANCES Symbol Parameter Value Unit R 0.75 C/W th (j-c) Junction to case Per diode 0.42 Total R 0.1 C/W th (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 1.5 mA R Reverse leakage cur- Tj = 25C V =45V R rent 175 350 Tj = 125C V * 0.55 V F Forward voltage drop Tj = 25CI =30A F 0.44 0.5 Tj = 125C I =30A F 0.73 Tj=25CI =60A F 0.64 0.72 Tj = 125C I =60A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.28xI + 0.0073 I F(AV) F (RMS) Fig. 1: Average forward power dissipation Fig. 2: Average current versus ambient versus average forward current (per diode). temperature (=0.5, per diode). PF(av)(W) IF(av)(A) 22 35 = 0.1 = 0.2 = 0.5 Rth(j-a)=Rth(j-c) 20 30 = 0.05 18 = 1 16 25 14 20 12 10 15 Rth(j-a)=15C/W 8 T T 10 6 4 5 =tp/T tp 2 =tp/T tp IF(av) (A) Tamb(C) 0 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(ARMtp) PARM(1s) PARM(25C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 T (C) j t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/4