X-On Electronics has gained recognition as a prominent supplier of STPS60SM200CW Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS60SM200CW Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS60SM200CW STMicroelectronics

STPS60SM200CW electronic component of STMicroelectronics
STPS60SM200CW STMicroelectronics
STPS60SM200CW Schottky Diodes & Rectifiers
STPS60SM200CW  Semiconductors

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See Product Specifications
Part No. STPS60SM200CW
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Dual Schottky 200V 640 mV 2 x 30 A
Datasheet: STPS60SM200CW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4 ea
Line Total: USD 2.4 
Availability - 485
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
116
Ship by Tue. 01 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 5.057
10 : USD 2.8917
30 : USD 2.5657
100 : USD 2.2303
500 : USD 2.0794
1000 : USD 2.0142

485

Ships to you between
Thu. 26 Jun to Tue. 01 Jul
MOQ : 1
Multiples : 1
1 : USD 2.4
25 : USD 2.325
50 : USD 2.28
75 : USD 2.25
100 : USD 2.025

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS60SM200CW from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS60SM200CW and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS60SM200C Power Schottky rectifier Features A1 K High reverse voltage (200 V) A2 Low forward voltage drop High frequency operation Description A2 The STPS60SM200C is a dual Schottky rectifier K A1 suited for high frequency switched-mode power supply. TO-247 STPS60SM200CW Housed in TO-247, this device is especially suited for use in telecom base station SMPS, providing these applications with a good efficiency at both Table 1. Device summary low and high load. Symbol Value I 2 x 30 A F(AV) V 200 V RRM T (max) 175 C j V (typ) 640 mV F May 2011 Doc ID 018819 Rev 1 1/7 www.st.com 7Characteristics STPS60SM200C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward current rms 50 A F(RMS) Per diode, = 0.5 T = 155 C 30 c I Average forward current = 0.5 A F(AV) per device, = 0.5 T = 150 C 60 c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 25 C 500 A FSM p c T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature -40 to + 175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 0.7 R Junction to case th(j-c) Total 0.5 C/W R Coupling 0.3 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 0.05 j (1) I Reverse leakage current V = V mA R R RRM T = 125 C 6 13 j T = 25 C 0.67 0.70 j I = 7.5 A F T = 125 C 0.51 0.55 j T = 25 C 0.73 0.77 j (2) V Forward voltage drop I = 15 A V F F T = 125 C 0.57 0.61 j T = 25 C 0.79 0.83 j I = 30 A F T = 125 C 0.64 0.69 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.58 x I + 0.0037 x I F(AV) F (RMS) 2/7 Doc ID 018819 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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