STPS8170DEE-TR STMicroelectronics

STPS8170DEE Power Schottky rectifier Datasheet production data Features NC Very low conduction losses A K Negligible switching losses A Extremely fast switching A Low thermal resistance NC A A A Avalanche capacity specified A A A NC High junction temperature ECOPACK 2 compliant component K K Description This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC PowerFLAT(3.3 x 3.3) converters. STPS8170DEE-TR Packaged in PowerFLAT, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, by-pass diode and Table 1. Device summary polarity protection applications.Its low profile was Symbol Value especially designed to be used in applications I 8 A with space-saving constraints. F(AV) V 170 V RRM T (max) 175 C j V (typ) 0.66 V F TM: PowerFLAT is a trademark of STMicroelectronics September 2012 Doc ID 023260 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STPS8170DEE 1 Characteristics Table 2. Absolute ratings (limiting values T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 170 V RRM I Forward rms current 15 A F(RMS) I Average forward current Tc = 145 C = 0.5 8 A F(AV) I Surge non repetitive forward current tp = 10 ms sinusoidal 100 A FSM (1) P Repetitive peak avalanche power tp = 10 s Tj = 125 C 400 W ARM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -15A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 1.5 15 mA j T = 25 C 0.90 j (2) V Forward voltage drop I = 8A V F F T = 125 C - 0.66 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.62 x I + 0.0125 x I F(AV) F (RMS) 2/8 Doc ID 023260 Rev 1